Properties of Semipolar InGaN QWs Grown on 3D Inverse GaN Pyramids 79 Properties of Semipolar InGaN QWs Grown on 3D Inverse GaN Pyramids
نویسنده
چکیده
The properties of thin InGaN films deposited via MOVPE on non-planar GaN surfaces are investigated in detail. Using a comprehensive combination of different investigation methods including transmission electron microscopy, spatially and time-resolved cathodoluminescence experiments and modeling of the radiative recombination kinetics a precise description of the semipolar QW properties can be presented.
منابع مشابه
Semipolar InGaN/GaN Converters for Bright Green Emission and Stripe LEDs 59 Semipolar InGaN/GaN Converters for Bright Green Emission and Stripe Light Emitting Diodes
Optically pumped green converter structures based on three-dimensional (3D) inverse pyramids were studied. The green emission intensity is determined by the conversion rate ηc and the absorption fraction ηa, indicating the InGaN/GaN quantum well (QW) crystal quality and its absorption capability, respectively. 15 was found to be the optimal QW number based the epitaxial condition for that serie...
متن کامل3D GaInN/GaN-based Green Light Emitters
The GaInN/GaN-based quantum wells (QWs) on one of the naturally stable semipolar facets (the {112̄2} facet) have inferior properties than those on the other (the {101̄1} facet). By optimizing the epitaxial growth conditions, the evolution of the {112̄2} facets of GaN inverse pyramids were successfully suppressed achieving a 50% higher photoluminescence (PL) intensity with even about 10 nm longer e...
متن کاملMOVPE Growth of Semipolar GaN on Patterned Sapphire Wafers: Growth Optimisation and InGaN Quantum Wells
We are able to achieve two different GaN semipolar surfaces by growing on patterned sapphire substrates: (101̄1) GaN on (112̄3) sapphire and (112̄2) on (101̄2). By this approach, the growth of a coalesced semipolar layer on a large area of about two inches diameter is possible. Well known from the c-plane direction, an in-situ deposited SiN interlayer could reduce the defect density also in semipol...
متن کامل3D GaN Structures with Reduced Piezoelectric Fields For Efficient Quantum Well Emission
A fabrication method for the formation of 3D GaN structures with reduced piezoelectric field is presented. Via optimized selective epitaxy the surface is just composed of hexagonally patterned semipolar {11̄01} or {112̄2} planes. GaN growth with less NH3 at a higher growth speed, a doubled effective area and good light outcoupling properties compared to c-plane growth are additional advantages of...
متن کاملBand Structure Measurements and Calculations of Epitaxially Grown GaN Based Photonic Crystal Slabs with Semipolar Quantum Wells
We report on the large area realization of GaN photonic crystal slabs with semipolar InGaN quantum wells (QWs) using laser interference lithography and selective area metalorganic vapour phase epitaxy (MOVPE). Directional extraction of guided modes was observed in angle-resolved photoluminescence spectroscopy (ARPL), and the photonic crystal slab dispersion relation was measured. A comparison o...
متن کامل